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FDA24N50 N-Channel MOSFET
FDA24N50
N-Channel MOSFET
500V, 24A, 0.19 Features
* RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A * Low gate charge ( Typ. 65nC) * Low Crss ( Typ. 35pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFETTM
August 2008
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G GDS
TO-3PN
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 30 24 14 96 1872 24 2.7 4.5 270 2.2 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.46 0.24 40
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDA24N50 Rev. A
1
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FDA24N50 N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDA24N50 Device FDA24N50 Package TO-3PN Reel Size Tape Width Quantity 30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.66 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 12A VDS = 20V, ID = 12A
(Note 4)
3.0 -
0.16 28
5.0 0.19 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 24A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
3120 460 35 65 18 26
4150 615 52 85 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 24A RG = 25
(Note 4, 5)
-
47 108 164 86
104 226 338 182
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 24A VGS = 0V, ISD = 24A dIF/dt = 100A/s
(Note 4)
-
540 8.1
24 96 1.4 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.5mH, IAS = 24A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 24A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDA24N50 Rev. A
2
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FDA24N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
60
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
10
ID,Drain Current[A]
150 C
o
10
-55 C 25 C
o
o
1
0.5 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 VDS,Drain-Source Voltage[V]
10
1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
4
5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.35
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
150
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.30
0.25
VGS = 10V
150 C
o
25 C
o
10
0.20
VGS = 20V
0.15
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
0.10
0
20 40 60 ID, Drain Current [A]
80
1 0.2
2. 250s Pulse Test
0.6 1.0 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
7500
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 100V VDS = 250V VDS = 400V
6000
Capacitances [pF]
8
4500
*Note: 1. VGS = 0V 2. f = 1MHz Ciss
6
3000
Coss
4
1500
Crss
2
*Note: ID = 24A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0
0
20 40 Qg, Total Gate Charge [nC]
60
70
FDA24N50 Rev. A
3
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FDA24N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75
*Notes: 1. VGS = 10V 2. ID = 12A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -75
-25 25 75 125 o TJ, Junction Temperature [ C]
175
-25 25 75 125 o TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area
200 100
100s 40s
Figure 10. Maximum Drain Current vs. Case Temperature
24
ID, Drain Current [A]
1ms
10
10ms DC
ID, Drain Current [A]
o o
18
1
Operation in This Area is Limited by R DS(on)
12
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
6
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
o
0.01
0.02 0.01 Single pulse
*Notes: 1. ZJC(t) = 0.46 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.001 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDA24N50 Rev. A
4
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FDA24N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA24N50 Rev. A
5
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FDA24N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDA24N50 Rev. A
6
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FDA24N50 N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA24N50 Rev. A
7
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FDA24N50 N-Channel MOSFET
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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
FDA24N50 Rev. A
8
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